Reliability Performance of Novel Tunneling Field Effect Transistors Based On Foundry Platform

In this work, the hot carrier injection (HCI) and negative bias temperature instability (NBTI) of a novel tunneling field effect transistor (TFET) manufactured by standard CMOS baseline platform is experimentally demonstrated. Results show that the reliability of the novel dopant segregated TFET (DS-TFET) is superior to the conventional MOSFET, and the reliability behavior of DS-TFET shows the similar temperature dependence to that of MOSFET. The proposed DS-TFET exhibits both excellent device performance and reliability, showing its great potential for ultra-low-power applications.