Radiation Hardness of MALTA2 Monolithic CMOS Sensors on Czochralski Substrates

Milou van Rijnbach,Dumitru Vlad Berlea,Valerio Dao, Martin Gaži,Phil Allport,Ignacio Asensi Tortajada, Prafulla Behera,Daniela Bortoletto,Craig Buttar, Florian Dachs,Ganapati Dash,Dominik Dobrijević, Lucian Fasselt,Leyre Flores Sanz de Acedo,Andrea Gabrielli,Vicente González,Giuliano Gustavino, Pranati Jana,Heinz Pernegger,Petra Riedler,Heidi Sandaker,Carlos Solans Sánchez,Walter Snoeys,Tomislav Suligoj, Marcos Vázquez Núñez, Anusree Vijay,Julian Weick,Steven Worm,Abdelhak M. Zoubir

arXiv (Cornell University)（2023）

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摘要

MALTA2 is the latest full-scale prototype of the MALTA family of Depleted Monolithic Active Pixel Sensors (DMAPS) produced in Tower Semiconductor 180 nm CMOS technology. In order to comply with the requirements of High Energy Physics (HEP) experiments, various process modifications and front-end changes have been implemented to achieve low power consumption, reduce Random Telegraph Signal (RTS) noise, and optimise the charge collection geometry. Compared to its predecessors, MALTA2 targets the use of a high-resistivity, thick Czochralski (Cz) substrates in order to demonstrate radiation hardness in terms of detection efficiency and timing resolution up to 3E15 1 MeV neq/cm2 with backside metallisation to achieve good propagation of the bias voltage. This manuscript shows the results that were obtained with non-irradiated and irradiated MALTA2 samples on Cz substrates from the CERN SPS test beam campaign from 2021-2023 using the MALTA telescope.

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关键词

malta2 monolithic cmos sensors,czochralski

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