Al2O3 Layers Grown by Atomic Layer Deposition As Gate Insulator in 3C-Sic MOS Devices.Emanuela Schiliro,Patrick Fiorenza,Raffaella Lo Nigro,Bruno Galizia,Giuseppe Greco,Salvatore Di Franco,Corrado Bongiorno,Francesco La Via,Filippo Giannazzo,Fabrizio RoccaforteMATERIALS（2023）引用 2|浏览31关键词high-& kappa,dielectrics,ALD,WBG,3C-SiCAI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
