Characterization of Noise in CMOS Ring Oscillators at Cryogenic Temperatures

IEEE ELECTRON DEVICE LETTERS(2023)

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摘要
Allan deviation provides a means to characterize the time-dependence of noise in oscillators and potentially identify the source characteristics. Measurements on a 130 nm, 7-stage ring oscillator show that the Allan deviation declines from 300 K to 150 K as expected, but surprisingly increases from 150 K to 11 K. At low temperatures, the measured Allan deviation can be well fit using a few random telegraph noise (RTN) sources over the range of a few kilohertz to a few gigahertz. Further, the RTN characteristics evolve to reveal an enhanced role in low-frequency noise at lower temperatures.
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关键词
Allan deviation,CMOS ring oscillator,noise,random telegraph noise,temperature,traps
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