Optimization of short channel effect by arsenic P-halo implant through polysilicon gate for 0.12 um P-MOSFET

Excellent PMOS short channel behavior is achieved with a high energy, large tilt angle arsenic P-halo implant. It was found that the tail profile of arsenic P-halo was implanted through the polysilicon gate; therefore, the channel concentration is modulated not only laterally from the gate edge but also vertically from the top of the polysilicon gate and it resulted in a very flat short channel behavior. The effect of the arsenic P-halo implant was comprehensively studied and well characterized to explain this specific phenomenon. The gate oxide integrity was examined by Q/sub BD/ at different P-halo implants. Excellent performance of the 0.12 /spl mu/m PMOSFET is also demonstrated in this work.