Optimized 750V SiC MOSFETs for Electric Vehicle Inverter Operation

We report an AEC-Q101-qualified 750V, 15 mΩ planar SiC MOSFETs with a long short circuit withstand time (SCWT) of > 9μs at V DS =400V and V GS =15V and a low specific on-resistance (R ON,SP ) of 2.1 mΩ.cm 2 at V GS =15V designed for xEV traction inverter applications. The R DS ( on) at V GS =15V increases from 15mΩ at 25 °C to 21 mΩ at 175 °C. A low turn-on (E ON ) and turn-off (E OFF ) switching energy loss of 95.5μJ and 67μJ at I DS =75A, V DS =400V was measured at 25 °C. The gate oxide lifetime at worst case operating fields of 5MV/cm is >> 20 years.