Large Tunneling Magnetoresistance in Perpendicularly Magnetized Magnetic Tunnel Junctions Using Co75Mn25 / Mo/Co

We study the magnetic and electrical transport properties of magnetic tunnel junctions (MTJs) consisting of a ${\mathrm{Co}}_{75}{\mathrm{Mn}}_{25}{/\mathrm{Mo}/\mathrm{Co}}_{20}{\mathrm{Fe}}_{60}{\mathrm{B}}_{20}$ multilayer prepared using a mass-production-compatible magnetron sputtering system. The ${\mathrm{Co}}_{75}{\mathrm{Mn}}_{25}{/\mathrm{Mo}/\mathrm{Co}}_{20}{\mathrm{Fe}}_{60}{\mathrm{B}}_{20}$ multilayer sandwiched between two MgO layers exhibits remarkable perpendicular magnetic anisotropy, and a uniaxial magnetic anisotropy constant as large as $0.2\phantom{\rule{0.2em}{0ex}}{\mathrm{MJ}/\mathrm{m}}^{3}$ is achieved by optimizing the ${\mathrm{Co}}_{75}{\mathrm{Mn}}_{25}$ layer thickness as well as the annealing temperature. The current-in-plane tunneling measurement reveals a large tunneling magnetoresistance of over 100% in perpendicularly magnetized MTJs. These experimental results indicate the applicability of ${\mathrm{Co}}_{75}{\mathrm{Mn}}_{25}$ alloy for magnetic random access memory devices.