Comparison of temperature distribution in nanosized transistors using modern heat transfer thermal model

In this paper two modern electronic structures have been presented. The structures are prototypical Fin Field Effect Transistors. One of them is design in 5 nm technology node while the second one is manufactured by the 12 nm technology node. The temperature distribution in these nanosized structures has been determined and compared between each other. Furthermore, to obtain the temperature distribution in considered electronic structures, the Dual-Phase-Lag model has been applied. This methodology is appropriate for electronic structures produced in nanometric. Apart from that, the comparison to the Fourier-Kirchhoff model has also been prepared. All results have been described and final conclusions have also been presented