Unveiling Phonon Dispersion Behavior of AlN/GaN Heterostructures Using EELS.

Journal Article Unveiling Phonon Dispersion Behavior of AlN/GaN Heterostructures Using EELS Get access Joaquin E Reyes-González, Joaquin E Reyes-González Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario, Canada Search for other works by this author on: Oxford Academic Google Scholar Niklas Dellby, Niklas Dellby Nion Co., Kirkland, Washington, United States Search for other works by this author on: Oxford Academic Google Scholar Benjamin Plotkin-Swing, Benjamin Plotkin-Swing Nion Co., Kirkland, Washington, United States Search for other works by this author on: Oxford Academic Google Scholar Ping Wang, Ping Wang Department of Electrical and Computer Engineering, University of Michigan, Ann Arbor, Michigan, United States Search for other works by this author on: Oxford Academic Google Scholar Ayush Pandey, Ayush Pandey Department of Electrical and Computer Engineering, University of Michigan, Ann Arbor, Michigan, United States Search for other works by this author on: Oxford Academic Google Scholar Zetian Mi, Zetian Mi Department of Electrical and Computer Engineering, University of Michigan, Ann Arbor, Michigan, United States Search for other works by this author on: Oxford Academic Google Scholar Maureen J Lagos Maureen J Lagos Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario, CanadaCanadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario, Canada Corresponding author: mjlagos@mcmaster.ca Search for other works by this author on: Oxford Academic Google Scholar Microscopy and Microanalysis, Volume 29, Issue Supplement_1, 1 August 2023, Pages 354–355, https://doi.org/10.1093/micmic/ozad067.165 Published: 22 July 2023