Characterization and Compact Modeling of the Thermal Resistance of SiGe HBTs From Cryogenic to Room Temperature
IEEE Transactions on Electron Devices(2023)
摘要
The thermal resistance
${R}_{\text {th}}$
of SiGe heterojunction bipolar transistors (HBTs) is characterized and modeled at cryogenic temperatures up to room temperature (RT). A physics-based analytical solution for the thermal resistance has been derived for this wide temperature range. Two formulations including both chuck temperature and power dependence of
${R}_{\text {th}}$
have been developed and show good agreement with data from both 3-D thermal simulation and measurements.
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关键词
Compact modeling,cryogenic operation,heterojunction bipolar transistor (HBT),low-temperature electronics,thermal resistance
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