Sensing metrics of a dual-cavity single-gate MOSHEMT

This paper presents the simulation study of the impact of dielectric modulation on the characteristics of a single-gate single-cavity and a single-gate dual-cavity AlGaN/GaN heterostructure for biomolecule detection. The drain current, which is used as a sensing metric to carry out the device’s sensitivity analysis, is affected by dependent variables, such as cavity design, various biomolecules, and charges. The drain current sensitivity with HfO 2 as the gate dielectric has been found to be 0.22 for cavity length of 40 nm each which decreased by 23% and 41% when cavity lengths are 30 nm and 25 nm, respectively. For 75%, 50%, and 25% fill percentage, the drain current sensitivity is observed to be 3.19, 0.75, and 0.54, respectively, establishing the applicability of the device for biosensing applications.