Variations in the characteristics of Cd x Zn 1− x S films deposited with little Cd-containing solutions

In order to prepare Cd x Zn 1− x S films with lower cadmium content and better performance as a buffer layer for copper indium gallium selenide (CIGS) solar cells, the performance of Cd x Zn 1− x S films deposited in a mixture of solutions containing extremely low cadmium sources was systematically investigated by chemical bath deposition (CBD) with the synergy of chemical experiments and numerical simulations. The experimental results show that the films have the best overall performance at a cadmium source condition of 0.007 M.