Investigation of Semiconductor Tunnel-Coupled Quantum Wells

The kinetics of the reflection signals of the nanostructures consisting of the same number of quantum wells with identical compositions In _x Ga _1-x As ( x=0,32 ) with barriers of GaAs consisting of 2, 4, 6, and 8 monolayers grown on a semiconductor reflector under identical conditions has been studied by the pump-probe method. A trend of reduction of the recovery time for thinner barriers has been revealed. The prospects of further investigation and practical application of quantum wells coupled by tunneling of charge carriers have been discussed.