Scaled Submicron Field-Plated Enhancement Mode High-K Gallium Nitride Transistors on 300mm Si(111) Wafer with Power FoM (R(ON)xQ(GG)) of 3.1 mohm-nC at 40V and f(T)/f(MAX) of 130/680GHz

We demonstrate a high voltage enhancement-mode (E-mode) high-k GaN-on-300mm Si(111) NMOS transistor capable of best-in-class performance and figure-of-merits for integrated power electronics and RF mm-wave. Using scaled submicron-length field-plate, the high-voltage GaN NMOS transistors demonstrate excellent R-ON<675 ohm-mu m with BVDS up to 100V, and power figure-of-merit (FoM), R(ON)xQ(GG) of 3.1 mohm-nC at 40V with a projected lifetime of 10 years. This FoM at 40V is similar to 20X better than state-of-the-art e-mode p-GaN HEMT, and similar to 30X better than Si LDMOS. Both gate field-plated and source field-plated GaN NMOS demonstrate true e-mode operation, achieving drain leakages as low as 0.3pA/mu m at 40V with V-G=0V, and can be fully turned on with V-G of 2V with low gate leakage <2pA/mu m (as opposed to 5-6V required for pGaN HEMT), thus requiring only simple CMOS driver technology. A 2x2 mm(2) power GaN die comprising high-side and low-side switches with integrated clamps, is also fabricated. The low-side GaN NMOS switch has a total width of 1300mm, and R-DSON of 1.9 mohm-mm(2). Moreover, the same 300mm GaN-on-Si(111) technology of this work, demonstrates a record f(MAX) of 680GHz (with f(T)=130GHz) at V-D=16V for a 30nm channel length GaN transistor employing scaled 100nm-length source field-plate.