BEOL-Compatible High-Performance a-IGZO Transistors with Record high I-ds,I- max=1207 mu A/mu m and on-off ratio exceeding 10(11) at V-ds=1V

In this work, BEOL-compatible high-performance amorphous IGZO-TFTs have been demonstrated using an optimized ITO interlayer for the source/drain contact. The ITO interlayer successfully reduces the Schottky barrier height from 145 meV for Ni/IGZO to 48 meV. The lowest contact resistance of 278 Omega center dot mu m has been demonstrated among IGZO transistors, much lower than the 1.85 k Omega center dot mu m of direct Ni contact. The contact resistance remains at a very low level of around 278 Omega center dot mu m at 4.3 K. The 60 nm channel length device exhibits a record-high g(m) peak of 637 mu S/mu m at V-ds =1.2 V and record-high on-state current of 1207 mu A/mu m at V-ds =1 V, the highest among all IGZO-based transistors.