Lead free 0.9Na(1/2)Bi(1/2)TiO(3)-0.1BaZr(0.2)Ti(0.8)O(3) thin film with large piezoelectric electrostrain

A sodium bismuth titanate-based thin film is widely investigated lead-free piezoelectrics with potential applications for modern micro-devices such as PiezoMEMS. In this work, a 0.9Na(1/2)Bi(1/2)TiO(3)-0.1BaZr(0.2)Ti(0.8)O(3) thin film was deposited on a Pt/Ti/SiO2/Si (001) substrate by the sol-gel spin coating method. The deposited piezoelectric film shows low dielectric loss and high remnant polarization. The measured ferroelectricity loop showed a coercive field of 110kV/cm and a saturation polarization of 46.83 mu C/cm(2). The piezoelectric response of this thin film does not decrease from room temperature to around 100 degrees C. The fabricated piezoelectric device with bottom and top electrodes showed a large macro-scale strain value of similar to 4% under the DC (30V) and AC voltages (f=800kHz, Vpp=10 V).