Direct Band Gap Ge_0.85Sn_0.15 Photodiodes for Room Temperature Gas Sensing

C. Cardoux, L. Casiez, M. Frauenrath,N. Pauc, V. Calvo,J. M. Hartmann, N. Coudurier,P. Rodriguez, P. Grosse, C. Constancias, O. Lartigue, P. Barritault, O. Gravrand, A. Chelnokov,V. Reboud

2023 IEEE SILICON PHOTONICS CONFERENCE, SIPHOTONICS（2023）

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摘要

Ge0.85Sn0.15-based stacks were grown by reduced pressure chemical vapor deposition on 200 mm Si wafers. The resulting photodiodes showed detectivities above 10(8) cm.Hz(1/2).W-1 at 1.55 mu m and a cutoff wavelength of 3.5 mu m. This detection range opens up promising perspectives for future all-group-IV gas sensors.

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关键词

germanium-tin, photodetector, group-IV, photodiode, Fourier transform infrared spectroscopy

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Direct Band Gap Ge0.85Sn0.15 Photodiodes for Room Temperature Gas Sensing

Direct Band Gap Ge_0.85Sn_0.15 Photodiodes for Room Temperature Gas Sensing