Wake-up-mitigated giant ferroelectricity in Hf_0.5Zr_0.5O₂ thin films through oxygen-providing, surface-oxidized W electrode

The ferroelectricity of Hf0.5Zr0.5O2 thin films makes them good candidate materials for current and future electronic devices. To maximize the remanent polarization of Hf0.5Zr0.5O2, a new strategy is proposed to provide oxygen from a surface-oxidized W electrode. The ferroelectricity of Hf0.5Zr0.5O2 thin films with top and bottom TiN or W electrodes was compared to understand the effects of oxygen supply from the electrodes. Employing W top and bottom electrodes resulted in a double remanent polarization value of up to similar to 60.25 mu C/cm(2); addi-tionally, the wake-up effect was weaker than that observed when the TiN electrodes were used. The oxygen supply from the W electrode increased the grain radius by 161.34%, resulting in a 204.01% increase in remanent polarization. This suggests that the electrode material is a critical determinant of the ferroelectric properties of Hf0.5Zr0.5O2.