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1300 Nm VCSELS with Active Region Based on InGaAs/InGaAlAs Superlattice for Long-Distance Transmission

V. V. Andryushkin,S. A. Blokhin,M. A. Bobrov,A. A. Blokhin,A. V. Babichev,A. G. Gladyshev,I. I. Novikov,L. Ya. Karachinsky,E. S. Kolodeznyi,K. O. Voropaev,A. Yu. Egorov

ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS（2023）

Cited 0|Views35
Key words
vertical-cavity surface-emitting lasers,molecular-beam epitaxy,buried tunnel junction
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