High temperature irradiation response of E-Mode GaN HEMT

In this paper, the high temperature irradiation response of a commercial enhanced GaN HEMT transistor is investigated using a Co-60 gamma-ray source. The GaN HEMT devices are irradiated to a total dose of 1Mrad(Si) at a dose rate of 76.55rad(Si)/s at 200 degrees C. Before and after irradiation, DC parameters characteristic were performed on GaN HEMT devices at room temperature to obtain the effect of irradiation on their electrical properties. The results show that the threshold voltage of the device is negative drift and the gate leakage and drain leakage increase after the total dose of 1Mrad(Si) irradiation, which is consistent with literature reports. At the same time, frequency C-V test shows that high temperature irradiation has no significant effect on the low frequency capacitance of the device, just a slightly negatively drifts after irradiation. Analysis shows that the interface trap charge introduced by irradiation plays a major role in the degradation of device characteristics.