Acoustically Operated Excitonic Transistor Using Poly(3-hexylthiophene)

Anorganic semiconductor, regioregular poly(3-hexylthiophene) (rrP3HT),based excitonic transistor on a piezoelectric YZ lithium niobate substrateis reported for the first time. The propagating surface acoustic wave(SAW) field ionizes the excitons, stores the charge pair in the SAWmodulated potential field in the semiconductor, and carries them forward.A long-range transport & SIM;4.7 mm at room temperature has beendemonstrated. The electrical control of the exciton flux was achievedwith SAW propagating through a dual metal-insulator-semiconductor(MIS) structure. The working of the device has been demonstrated usingwhite and green light. A threshold voltage of -20.65 V wasobserved, and the working mechanism of the proposed device has beenverified through numerical analysis using MATLAB. The potential useof the proposed device structure as an all optical device was verifiedelectrically with additional electrode terminals at the output end.