Influence of BCB Protection on Irradiation Response of InP-Based HEMTs: A Comparative Study
IEEE TRANSACTIONS ON ELECTRON DEVICES（2023）
Key words
Benzocyclobutene (BCB) passivation,displacement damage,InP-based high electron mobility transistors (HEMTs),proton irradiation,TCAD simulation
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined