A New Approach for Reconfigurable Multifunction Logic-in-Memory Using Complementary Ferroelectric-FET (CFeFET)

IEEE TRANSACTIONS ON ELECTRON DEVICES(2023)

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摘要
Ferroelectric-field-effect transistors (FeFETs) are promising for future nonvolatile-memory and computation-in-memory applications. This brief presents a new approach for logic-in-memory by using complementary FeFET (CFeFET). We demonstrate that the CFeFET can serve as a 2-to-1 multiplexer (MUX) with the ferroelectric polarization state acting as the selector. Furthermore, the CFeFET-based MUX can be exploited as a reconfigurable and nonvolatile multifunction logic gate. We demonstrate our approach and the logic functionality of reconfigurable AND/OR/XOR through calibrated SPICE simulation. This study may provide insights and facilitate future beyond-von-Neumann data-centric computing with advanced FeFET technologies.
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关键词
logic-in-memory,ferroelectric-fet
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