Transition from Schottky to ohmic contacts in the C31 and MoS2 van der Waals heterostructure
PHYSICAL CHEMISTRY CHEMICAL PHYSICS(2023)
摘要
The utilization of conventional metal contacts has restricted the industrial implementation of two-dimensional channel materials. To address this issue, we conducted first-principles calculations to investigate the interface properties of C-31 and MoS2 contacts. An ohmic contact and a low van der Waals barrier were found in the C-31/MoS2 heterostructure. Our findings provide a promising new contact metal material for two-dimensional nanodevices based on MoS2.
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关键词
ohmic contacts,van der waals,schottky,mos<sub>2</sub>
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