Design of High-RA STT-MRAM for Future Energy-Efficient In-Memory Computing

Ming-Chun Hong,Yi-Hui Su,Guan-Long Chen,Yu-Chen Hsin,Yao-Jen Chang,Kuan-Ming Chen,Shan-Yi Yang,I-Jung Wang, S. K. Ziaur Rahaman,Hsin-Han Lee,Jeng-Hua Wei,Shyh-Shyuan Sheu,Wei-Chung Lo,Shih-Chieh Chang,Tuo-Hung Hou

2023 INTERNATIONAL VLSI SYMPOSIUM ON TECHNOLOGY, SYSTEMS AND APPLICATIONS, VLSI-TSA/VLSI-DAT（2023）

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摘要

In contrast to the low-RA STT-MRAM for memory applications, high-RA (> 500 Omega-mu m(2)) STT-MRAM with high cell resistance (1 M Omega) is required to support energy-efficient in-memory computing beyond 10 POPS/W. Scaling the coercive magnetic field and cell dimension and increasing the MgO thickness are found critical for enlarging RA and write margin.

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关键词

cell dimension,coercive magnetic field,future energy-efficient in-memory computing,high cell resistance,high-RA STT-MRAM,low-RA STT-MRAM,memory applications,MgO thickness,MgO/bin,write margin

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