Novel Control Method and Applications for Negative Mode E-Beam Inspection

E-beam voltage contrast inspection is a very common method for in-line detection of many key defect types for rapid yield learning during technology development. Generally, the wafer surface is charged positive, but sometimes charging the wafer surface negative makes more sense. This paper reviews four advantages that negative charging may provide. Switching from positive to negative charging is typically achieved using landing energy and/or extraction voltage. A third control knob is introduced and demonstrated using three common inspection layers, contact chemical mechanical polish (CMP), 3D NAND wordline shorts and 3D NAND wordline opens.