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A 3nm 256mb SRAM in FinFET Technology with New Array Banking Architecture and Write-Assist Circuitry Scheme for High-Density and Low-VMIN Applications.

Jonathan Chang,Yen-Huei Chen,Gary Chan, Kuo-Cheng Lin,Po-Sheng Wang,Yangsyu Lin,Sevic Chen, Peijiun Lin,Ching-Wei Wu,Chih-Yu Lin,Yi-Hsin Nien,Hidehiro Fujiwara,Atul Katoch,Robin Lee,Hung-Jen Liao,Jhon-Jhy Liaw,Shien-Yang Michael Wu,Quincy Li

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)（2023）

Cited 5|Views34
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