Transition from Schottky to ohmic contacts in the C 31 and MoS 2 van der Waals heterostructure.

The utilization of conventional metal contacts has restricted the industrial implementation of two-dimensional channel materials. To address this issue, we conducted first-principles calculations to investigate the interface properties of C and MoS contacts. An ohmic contact and a low van der Waals barrier were found in the C/MoS heterostructure. Our findings provide a promising new contact metal material for two-dimensional nanodevices based on MoS.