Phase evolution in epitaxial Gd2O3 due to anneal temperature for silicon on insulator application

Shubham Patil,Sandeep Kumar,Bhaveshkumar Kamaliya,Adityanarayan H Pandey,Rakesh G. Mote,Apurba Laha,Udayan Ganguly

Thin Solid Films（2023）

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摘要

•Epitaxial cubic-Gd2O3 with (222) oriented planes on Si (111) by RF sputtering.•Phase evolution and chemical dynamics study with rapid thermal annealing (RTA).•850 °C RTA, enhancement in epi‑Gd2O3 phase by epi‑regrowth of amorphous interface.•Si out-diffusion in Gd2O3 (> 900 °C) causes degradation in film crystallinity.•Low-cost solution for buried oxide layer in Silicon-on-Insulator technology.

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关键词

Phase transformation,Epitaxy,Rare-earth oxide,Thin film,Silicon-on-insulator,Gadolinium oxide,Sputtering,Rapid thermal annealing

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