Characteristics of a pulsed hollow cathode discharge operated in an Ar+O2 gas mixture and deposition of copper nickel oxide thin films

A hollow cathode discharge with a CuNi (Cu50Ni50) cathode is operated inside a vacuum chamber with Ar gas flowing through its nozzle. O2 gas is admitted to the vaccum chamber. Typical Ar+O2 gas pressures are in the range of 2–50 Pa. The energy distribution of plasma ions is investigated with the help of energy-resolved mass spectrometry. Singly charged Ar+ and molecular O2+ ions are the most abundant ionic species. Deposition rate and heat flux to a substrate increase as function of discharge current. At high pressures, the deposition rate is further increased by the directional gas flow, which becomes more focused onto the substrate. Deposited and annealed thin films are analysed by X-ray diffraction and Raman spectroscopy. As-deposited films are composed of a mixed CuxNi1−xO cubic phase with a preferred (111) orientation. Upon annealing at 600 oC, the mixed CuxNi1−xO phase separates into two sub-phases composed of NiO and CuO. Annealed films display a photoelectrochemical (PEC) activity as a photocathode. The PEC activity deteriorates with time, however. This behaviour is related to the reduction of CuO to Cu2O.