Influence of White Light on the Photoelectric Characteristics of UV Detectors Based on β-Ga₂O₃

In this report, we consider the effect of radiation with radiation energy below the $\beta $ -Ga ₂ O ₃ band-gap on the photoelectric characteristics of ultraviolet (UV) radiation detectors based on gallium oxide thin films. The gallium oxide film was deposited by radio frequency magnetron sputtering. Interdigital Ti/V electrodes were formed with an inter-electrode distance ${d}$ = $30 \mu \text{m}$ . The structures exhibit high values of photocurrent under irradiation with a wavelength of $\lambda $ = 254 nm and intensity of $780 \mu \text{W}$ /cm ² . The detectors exhibit persistent photoconductivity after exposure to UV radiation. The presence of persistent conductivity is explained by the high concentration of traps in the Ga ₂ O ₃ film and their recharging under UV irradiation. Radiation with an energy quantum below the $\beta $ -Ga ₂ O ₃ band-gap changes the charge state of trap centers in a gallium oxide film. This effect leads to an increase in photocurrent under UV exposure and increases the stability of detectors.