An anomalous Hall effect in edge-bonded monolayer graphene.

Nanoscale horizons(2023)

引用 0|浏览10
暂无评分
摘要
An anomalous Hall effect (AHE) is usually presumed to be absent in pristine graphene due to its diamagnetism. In this work, we report that a gate-tunable Hall resistance can be obtained in edge-bonded monolayer graphene without an external magnetic field. In a perpendicular magnetic field, consists of a sum of two terms: one from the ordinary Hall effect and the other from the AHE (). Plateaus of ∼ 0.94/3 and ∼ 0.88/3 have been observed while the longitudinal resistance decreases at a temperature of 2 K, which are indications of the quantum version of the AHE. At a temperature of 300 K, shows a positive, giant magnetoresistance of ∼177% and still has a value of ∼400 Ω. These observations indicate the existence of a long-range ferromagnetic order in pristine graphene, which may lead to new applications in pure carbon-based spintronics.
更多
查看译文
关键词
graphene,anomalous hall effect,monolayer,edge-bonded
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要