Strain Behavior and Dopant Activation of Heavily In-Situ B-doped SiGe Epitaxial Films Treated by Nanosecond Laser Annealing
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING（2024）
Key words
Nanosecond laser annealing,Strain behavior,Dopant activation,In-situ B-Doped (ISBD) SiGe film
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