Nitrogen isotope effects on boron vacancy quantum sensors in hexagonal boron nitride

Recently, there has been growing interest in researching the use of hexagonal boron nitride (hBN) for quantum technologies. Here we investigate nitrogen isotope effects on boron vacancy (V$_\text{B}$) defects, one of the candidates for quantum sensors, in $^{15}$N isotopically enriched hBN synthesized using metathesis reaction. The Raman shifts are scaled with the reduced mass, consistent with previous work on boron isotope enrichment. We obtain nitrogen isotopic composition dependent optically detected magnetic resonance spectra of V$_\text{B}$ defects and determine the hyperfine interaction parameter of $^{15}$N spin to be -64 MHz. Our investigation provides a design policy for hBNs for quantum technologies.