Self-powered Schottky barrier photodiodes based on homoepitaxial Ga2O3 film

Teng Jiao,Xinming Dang,Wei Chen,Zhengda Li,Zhaoti Diao,Peiran Chen,Xin Dong,Yuantao Zhang,Baolin Zhang

Materials Letters（2023）

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摘要

•Homoepitaxial Ga2O3 film was grown by MOCVD.•Vertical Schottky barrier photodiode was fabricated based on homoepitaxial Ga2O3 film.•The photodiode exhibited high responsitivity and ultra-fast response speed.

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关键词

homoepitaxial ga2o3 film,schottky barrier,self-powered

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