Nucleation and growth of SiC at the interface between molten Si and graphite

In the present work, the evolution of the SiC layer formed at the interface between liquid silicon and solid carbon is studied using a diffusion couple configuration. Reaction conditions were isothermal, with a temperature of 1450 °C maintained from 2 min to 4 h. The rapid heating and cooling of the Si–C diffusion couple specimens were achieved using a Pulse-Electric Current Sintering system. Crystallographic, compositional, and phase distribution data obtained after different reaction times were used to develop a two-stage model for SiC growth at the interface between molten Si and C. Initially, the formation of SiC at the interface is governed by diffusion of C into the molten Si and dissolution/reprecipitation of formed SiC nuclei. These nuclei further grow into larger SiC grains at the Si–C interface and this initial stage is successfully modeled using the Johnson-Mehl-Avrami-Kolmogorov model. Once a continuous SiC layer forms at the Si–C interface, the growth of SiC is controlled by the diffusion of C through the SiC layer, which can be modeled using a power rate law. However, the nature of this diffusion is difficult to determine with certainty since the rate laws for both grain boundary and bulk diffusion fit experimental data equally well.