Intrinsic resistive switching in ultrathin SiOx memristors for neuromorphic inference accelerators

Wanjun Chen,Yiping Cheng,Jun Ge,ZeLin Ma,XuCheng Cao,Shanqing Diao,Zhiyu Liu,Shusheng Pan

Applied Surface Science（2023）

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摘要

•Ultrathin native silicon oxide is used as resistive switching layer.•Sn acts as the top electrode and the oxygen reservoir.•Ultrathin SiOx memristor shows low variability and good endurance.•Simulated MNIST image classifier based on devices shows 98% accuracy.

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关键词

Memristor,Switching variability,2D-like nonlayered,SiOx,Oxygen reservoir,Neuromorphic inference

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