High-quality InGaAs films bonded on Si substrate with a thin polycrystalline Si intermediate layer

•A polycrystalline Si layer is introduced to eradicate the influence of lattice misfit.•Ar Plasma treatment highly enhanced the bonding strength of InGaAs/Si bonded pair at low temperatures.•A defect-rich region near the epitaxial interface of InGaAs and InP is revealed by depth-dependent and power-dependent photoluminescence (PL) measurements.•A high-quality Si-based InGaAs film is obtained by heterogeneous bonding and wet etching techniques.