Direct growth and interface reactions of ferroelectric Hf0.5Zr0.5O2 films on MoS2

Mirine Leem,Deokjoon Eom,Heesoo Lee, Kwangwuk Park,Kwangsik Jeong,Hyoungsub Kim

Applied Surface Science（2023）

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摘要

•Direct ALD and PMA of ferroelectric HZO films on MoS2 for top-gate FET.•O3-based ALD forms uniform HZO films by oxidizing MoS2 at an atomic layer level.•PMA develops ferroelectricity but dissociates MoS2 by an extra atomic layer level.•A kinetic model to describe interfacial reactions occurring during PMA is proposed.

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关键词

MoS2, Hafnium zirconium oxide, Ferroelectric, Atomic layer deposition, Interface

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