GaAs hetero-epitaxial layers grown by MOVPE on exactly-oriented and off-cut (1 1 1)Si: Lattice tilt, mosaicity and defects content

Nico Lovergine,Ilio Miccoli,Leander Tapfer,Paola Prete

Applied Surface Science（2023）

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摘要

GaAs epilayers double-step grown on exactly-oriented and offcut (111)Si show mosaicity and different types of rotational twins.

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关键词

GaAs heteroepitaxy,Silicon substrate,Rotational twins,Mosaicity,Metalorganic vapor phase epitaxy,X-ray polar figures,High resolution X-ray diffraction,Reciprocal space mapping

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