Influence of N-doped aluminosilicate as an electrolyte on the properties of all-solid-state electrochromic devices

As an optical property with excellent dielectric properties combined with antireflection, AlSiON is not currently being investigated as electrochromic devices. Based on the optimized Al3+ solid-state electrolyte Al2SiO5, which is doped with different levels of N elements, the opto-electrical properties of the formed AlSiON in electrochromic devices have been systematically examined. AlSiON with an N-doping ratio of 3.4% achieves outstanding optical modulation (58.17%) and switching speed (22.2 s for coloring and 3.5 s for bleaching), as well as an effective reduction of leakage currents (68.39 μA/cm2) in electrochromic devices. By XPS analysis, the N content of 3.4% AlSiON is internally bonded with a proportion of Si–N to Al–N bonds, which generates a dielectric high Si3N4 composition effectively blocking electron breakdown.