Direct parameter extraction method of EEHEMT nonlinear model for InP HEMT

A direct parameter extraction method of EEHEMT nonlinear empirical model is proposed in this paper. An improved DC model is also presented by considering the channel length modulation parameter (kappa$$ \kappa $$) as a function of gate-to-source voltage. Model verification is carried out by comparison of measured and simulated current-voltage characteristics and S-parameters. Good agreement is obtained between the measured and modeled results for 2 x 15 mu m gatewidth (number of gate fingers x gatewidth) 70-nm gatelength InP high electron mobility transistors (HEMT). An increased accuracy in modeling the I-V and RF characteristics is also obtained in the proposed model, compared with the conventional one.