Mechanical defects in the “p-TRISO”-particle covering layers obtained through the ion implantation process

Zuzanna M. Krajewska,Tomasz Buchwald, Andrzej Droździel,Wacław Gudowski,Krzysztof Pyszniak,Tomasz Tokarski,Marcin Turek

Annals of Nuclear Energy（2023）

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摘要

•The implantation method is a tool to reflect the irradiation in the reactor core.•Initial layer damage of TRISO-particles occurs at the fluence of 1014 ions/cm2.•Due to the ion fluence increasing the Buffer-IPyC interface changed its position.

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关键词

TRISO,Ion implantation,Neon,Damage,Raman spectroscopy

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