Leaky FinFET for Reservoir Computing with Temporal Signal Processing.

ACS applied materials & interfaces(2023)

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摘要
Reservoir computing can greatly reduce the hardware and training costs of recurrent neural networks with temporal data processing. To implement reservoir computing in a hardware form, physical reservoirs transforming sequential inputs into a high-dimensional feature space are necessary. In this work, a physical reservoir with a leaky fin-shaped field-effect transistor (L-FinFET) is demonstrated by the positive use of a short-term memory property arising from the absence of an energy barrier to suppress the tunneling current. Nevertheless, the L-FinFET reservoir does not lose its multiple memory states. The L-FinFET reservoir consumes very low power when encoding temporal inputs because the gate serves as an enabler of the write operation, even in the off-state, due to its physical insulation from the channel. In addition, the small footprint area arising from the scalability of the FinFET due to its multiple-gate structure is advantageous for reducing the chip size. After the experimental proof of 4-bit reservoir operations with 16 states for temporal signal processing, handwritten digits in the Modified National Institute of Standards and Technology dataset are classified by reservoir computing.
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关键词
charge trap,leaky fin-shaped field-effect transistor(L-FinFET),reservoir computing,short-term memory,temporal signal processing
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