Spatio-Temporal Modeling for Flash Memory Channels Using Conditional Generative Nets

Modeling spatio-temporal read voltages with complex distortions arising from the write and read mechanisms in flash memory devices is essential for the design of signal processing and coding algorithms. In this work, we propose a data-driven approach to modeling NAND flash memory read voltages in both space and time using conditional generative networks. This generative flash modeling (GFM) method reconstructs read voltages from an individual memory cell based on the program levels of the cell and its surrounding cells, as well as the time stamp. We evaluate the model over a range of time stamps using the cell read voltage distributions, the cell level error rates, and the relative frequency of errors for patterns most susceptible to intercell interference (ICI) effects. Experimental results demonstrate that the model accurately captures the complex spatial and temporal features of the flash memory channel.