Theoretical prediction of the carrier mobilities for MII2M^III-Cl-layered double hydroxides in three-dimensional directions

Si-Min Xu,Yu-Quan Zhu,Zi-Ru Chen,Jiang-Rong Yang,Xudong Chen,Hong Yan

Journal of Materials Chemistry C（2022）

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摘要

Layered double hydroxides may be used as gate insulators in field-effect transistors due to their anisotropic carrier mobilities, large band gap energies and moderate dielectric permittivities.

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Theoretical prediction of the carrier mobilities for MII2MIII-Cl-layered double hydroxides in three-dimensional directions

Theoretical prediction of the carrier mobilities for MII2M^III-Cl-layered double hydroxides in three-dimensional directions