Band alignment of orthorhombic Ga2O3 with GaN and AlN semiconductors

Shibin Krishna,Yi Lu,Che-Hao Liao,Vishal Khandelwal,Xiaohang Li

Applied Surface Science（2022）

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摘要

•High-quality orthorhombic Ga2O3epitaxial film grown on GaN, AlN and Sapphire substrate by pulsed laser deposition.•A unique type-I band alignment of κ -Ga2O3with GaN and AlN is observed.•There is a high conduction band offset of1.38 eV and 1.04 eV forκ-Ga2O3/GaN, and κ -Ga2O3/AlN heterostructure.

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关键词

Band alignment,Orthorhombic Ga2O3,GaN,AlN

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