Strain induced magnetic hysteresis in MoS₂ and WS₂ monolayers with symmetric double sulfur vacancy defects

Lin Xue,Chaoyu He,Zhi Yang,Zhiyi Zhang,Lichun Xu,Xiaopeng Fan,Longlong Zhang,Lingzhen Yang

Physical Chemistry Chemical Physics（2022）

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摘要

The magnetic moment of the symmetric double sulfur vacancy in a MoS2 monolayer can be modulated within the range 0 μB to 7.24 μB under sweeping strain, with a clear hysteresis loop.

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Strain induced magnetic hysteresis in MoS2 and WS2 monolayers with symmetric double sulfur vacancy defects

Strain induced magnetic hysteresis in MoS₂ and WS₂ monolayers with symmetric double sulfur vacancy defects