High-temperature continuous-wave operation of 1310 nm InAs/GaAs quantum dot lasers

Here we report 1.3 & mu;m electrical injection lasers based on InAs/GaAs quantum dots (QDs) grown on a GaAs substrate, which can steadily work at 110 & DEG;C without visible degradation. The QD structure is designed by applying the Stranski-Krastanow growth mode in solid source molecular beam epitaxy. The density of InAs QDs in the active region is increased from 3.8 x 1010 cm-2 to 5.9 x 1010 cm-2. As regards laser performance, the maximum output power of devices with low-density QDs as the active region is 65 mW at room temperature, and that of devices with the high-density QDs is 103 mW. Meanwhile the output power of high-density devices is 131 mW under an injection current of 4 A at 110 & DEG;C.