Record 7(N)+7(P) Multiple VTs Demonstration on GAA Si Nanosheet N/pfets Using WFM-Less Direct Interfacial La/Al-Dipole Technique
2022 International Electron Devices Meeting (IEDM)（2022）
Key words
ALD in-situ direct dual dielectric dipole control,dipole intensity,GAA silicon nanosheet nFETs,GAA silicon nanosheet pFETs,HK films,horizontal gate-all-around nanosheet pFETs,horizontal gate-all-around nanosheet nFETs,La-Al/int,low power GAA SiNS CMOS process,multiple threshold voltages,multiVT application,record 7(N)+7(P) multiple VTs,sheet-to-sheet spacing pinch-off,Si/int,stacked channels,ultra-thin high-k dielectric films,voltage 1105.0 mV,voltage 76.0 mV,voltage 83.0 mV,voltage 873.0 mV,WFM-less direct interfacial dipole technique,WFM-less gate stack,work-function-metal-less direct interfacial dipole technique
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